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ISL9R3060G2, ISL9R3060P2
May 2004
ISL9R3060G2, ISL9R3060P2
30A, 600V StealthTM Diode
General Description
The ISL9R3060G2 and ISL9R3060P2 are StealthTM diodes optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49411.
Features
* Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2 * Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 35ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated
Applications
* Switch Mode Power Supplies * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode * Motor Drive FWD * SMPS FWD * Snubber Diode
Package
JEDEC STYLE 2 LEAD TO-247
ANODE CATHODE CATHODE (BOTTOM SIDE METAL) CATHODE (FLANGE)
Symbol
JEDEC TO-220AC
K
A CATHODE ANODE
Device Maximum Ratings TC= 25C unless otherwise noted
Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 Ratings 600 600 600 30 70 325 200 20 -55 to 175 300 260 Units V V V A A A W mJ C C C
CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
(c)2004 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P2 Rev. C3
ISL9R3060G2, ISL9R3060P2
Package Marking and Ordering Information
Device Marking R3060G2 R3060P2 Device ISL9R3060G2 ISL9R3060P2 Package TO-247 TO-220AC Tape Width Quantity -
Electrical Characteristics TC = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
IR Instantaneous Reverse Current VR = 600V TC = 25C TC = 125C 100 1.0 A mA
On State Characteristics
VF Instantaneous Forward Voltage IF = 30A TC = 25C TC = 125C 2.1 1.7 2.4 2.1 V V
Dynamic Characteristics
CJ Junction Capacitance VR = 10V, IF = 0A 120 pF
Switching Characteristics
trr trr IRRM QRR trr S IRRM QRR trr S IRRM QRR dIM/dt Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovery Charge Maximum di/dt during tb IF = 1A, dIF/dt = 100A/s, VR = 30V IF = 30A, dIF/dt = 100A/s, VR = 30V IF = 30A, dIF/dt = 200A/s, VR = 390V, TC = 25C IF = 30A, dIF/dt = 200A/s, VR = 390V, TC = 125C IF = 30A, dIF/dt = 1000A/s, VR = 390V, TC = 125C 27 36 36 2.9 55 110 1.9 6 450 60 1.25 21 730 800 35 45 A nC A/s A nC ns ns ns ns A nC ns
Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-247 Thermal Resistance Junction to Ambient TO-220 0.75 30 62 C/W C/W C/W
(c)2004 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C3
ISL9R3060G2, ISL9R3060P2
Typical Performance Curves
60 175 C 50 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 150oC 40 125 C 30
o o
5000 175oC 1000 25oC 150oC 125oC 100 100oC 75oC
10
20 100oC 10
1 25oC 0.1 100
0
0
0.5
1.0
1.5
2.0
2.5
3.0
200
300
400
500
600
VF, FORWARD VOLTAGE (V)
VR , REVERSE VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
100 VR = 390V, TJ = 125C
Figure 2. Reverse Current vs Reverse Voltage
120 VR = 390V, TJ = 125C 100 t, RECOVERY TIMES (ns) tb AT IF = 60A, 30A, 15A 80
90 tb AT dIF/dt = 200A/s, 500A/s, 800A/s 80 t, RECOVERY TIMES (ns) 70 60 50 40 30 20 10 0 0 10 ta AT dIF/dt = 200A/s, 500A/s, 800A/s 20 30 40 50 60 0 200
60
40
20 ta AT IF = 60A, 30A, 15A 400 600 800 1000 1200 1400 dIF /dt, CURRENT RATE OF CHANGE (A/s) 1600
IF, FORWARD CURRENT (A)
Figure 3. ta and tb Curves vs Forward Current
IRRM , MAX REVERSE RECOVERY CURRENT (A)
Figure 4. ta and tb Curves vs dIF/dt
20 VR = 390V, TJ = 125C 18 16 14 12 10 8 dIF/dt = 200A/s 6 4 dIF/dt = 500A/s dIF/dt = 800A/s
IRRM , MAX REVERSE RECOVERY CURRENT (A)
30 VR = 390V, TJ = 125C 25 IF = 30A 20 IF = 15A IF = 60A
15
10
5 0 200
0
10
20
30
40
50
60
400
600
800
1000
1200
1400
1600
IF, FORWARD CURRENT (A)
dIF /dt, CURRENT RATE OF CHANGE (A/s)
Figure 5. Maximum Reverse Recovery Current vs Forward Current
Figure 6. Maximum Reverse Recovery Current vs dIF/dt
(c)2004 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C3
ISL9R3060G2, ISL9R3060P2
Typical Performance Curves (Continued)
S, REVERSE RECOVERY SOFTNESS FACTOR QRR, REVERSE RECOVERY CHARGE (nC) 2.5 IF = 60A VR = 390V, TJ = 125C 1200 VR = 390V, TJ = 125C 1000 IF = 60A
2.0
IF = 30A
800
IF = 30A
1.5 IF = 15A 1.0
600 IF = 15A 400
0.5 200
400
600
800
1000
1200
1400
1600
200 200
400
600
800
1000
1200
1400
1600
dIF/dt, CURRENT RATE OF CHANGE (A/s)
dIF /dt, CURRENT RATE OF CHANGE (A/s)
Figure 7. Reverse Recovery Softness Factor vs dIF/dt
1000
Figure 8. Reverse Recovery Charge vs dIF/dt
CJ , JUNCTION CAPACITANCE (pF)
800
600
400
200
0
0.1
1
10
100
VR , REVERSE VOLTAGE (V)
Figure 9. Junction Capacitance vs Reverse Voltage
1.0
THERMAL IMPEDANCE
ZJA, NORMALIZED
DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.1
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
SINGLE PULSE
0.01 10-5
10-4
10-3
10-2 10-1 t, RECTANGULAR PULSE DURATION (s)
100
101
Figure 10. Normalized Maximum Transient Thermal Impedance
(c)2004 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C3
ISL9R3060G2, ISL9R3060P2
Test Circuit and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF
L IF DUT RG CURRENT SENSE + VDD 0.25 IRM IRM MOSFET 0 dIF dt ta trr tb
VGE t1 t2
Figure 11. trr Test Circuit
Figure 12. trr Waveforms and Definitions
I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT t0 t1 t2 t R + VDD IV VAVL
IL
IL
Figure 13. Avalanche Energy Test Circuit
Figure 14. Avalanche Current and Voltage Waveforms
(c)2004 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM
Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM
SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11

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